Factory Lead Time  

10 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

53A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

120W Tc

Turn Off Delay Time  

43 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Bulk

Series  

HEXFET®

Published  

1997

JESD-609 Code  

e3

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC  

55V

Peak Reflow Temperature (Cel)  

250

Current Rating  

53A

Time@Peak Reflow Temperature-Max (s)  

30

Lead Pitch  

5.45mm

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

Case Connection  

DRAIN

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

20m Ω @ 29A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

61nC @ 10V

Rise Time  

80ns

Vgs (Max)  

±20V

Fall Time (Typ)  

52 ns

Continuous Drain Current (ID)  

53A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-247AC

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

49A

Drain-source On Resistance-Max  

0.02Ohm

Drain to Source Breakdown Voltage  

55V

Dual Supply Voltage  

55V

Recovery Time  

110 ns

Nominal Vgs  

4 V

Height  

20.7mm

Length  

15.87mm

Width  

5.3086mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free